CONTACT INFORMATION
| Phone: (216) 368-6120 |
| Fax: (216) 368-4671 |
| Email: walter.lambrecht@case.edu |
Office: Rockefeller 104B, 10900 Euclid Avenue, Cleveland, OH 44106-7079
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EDUCATION
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Ph.D in Physics University of Ghent (Belgium)
Lic in Physics Univerisity of Ghent (Belgium) |
ACTIVE RESEARCH
Spintronics
Spintronics is spin-dependent electronics. Electronic structure calculations are used to study atomic scale spin-dependent phenomena and materials properties in metallic and half-metallic, ferromagnetic or antiferromagnetic compounds, and dilute magnetic semiconductors doped with transition metal and rare-earth elements. |
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Coppersulfides
Coppersulfides CuxS have complex crystal structures with disordered (almost liquid) Cu inside a S lattice. Our research tries to understand the electronic band structure of these materials as a starting point for their use in photovoltaic cells in nanocrystalline form.
Chalcopyrite semiconductors
Chalcopyrite semiconductors like ZnGeP2, CdGeAs2 AgGa(Se,Te)2 are useful for nonlinear optical frequency conversion. We study point defects in these materials using first-principles electronic structure calculations and optical properties such as phase matching birefringence and second order nonlinear susceptibility.
Stacking faults in Silicon Carbide
Stacking faults (SF) in hexagonal SiC lead to a degradation of devices. We try to understand the mechanism and driving force which causes these defects to expand in devices.
POTENTIAL IMPACT
Spin-dependent electronics may lead to new device concepts, utilizing the spin as well as the charge of the electron, merging of magnetic storage and semiconductor computing functionalities. Coppersulfide nanoparticles offer new opportunities in photovoltaics. Chalcopyrite semiconductors frequency converters may lead to new all-solid state laser systems for the mid infrared range.
SELECTED PUBLICATIONS
A. Herwadkar and W. R. L. Lambrecht, Phys. Rev. B 72, 235207 (2005) “Mn-doped ScN: A dilute ferromagnetic semiconductor with local exchange coupling”
X. Jiang, M.S. Miao and W. R. L. Lambrecht, Phys. Rev. B 73, 193203 (2006), “Theoretical study of the phosphorus vacancy in ZnGeP2”
W. R. L. Lambrecht and M. S. Miao
Phys. Rev. B 73, 155312 (2006), “Electronic driving force for stacking fault expansion in 4H‐SiC”
FIELDS
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