Publications
Pirouz, P. (2014). Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth. Materials Express, 4 (1), 41-53.
Cowen, J., Lucas, L., Ernst, F., Pirouz, P., Hepp, A., & Bailey, S. (2005). Liquid-Phase Deposition of Single-Phase Alpha-Copper-Indium-Diselenide. Materials Science and EngineeringB, 116 (), 311-319.
Pirouz, P., Ernst, F., & Ikuhara, Y. (1998). On Epitaxy and Orientation Relationship in Bicrystals. Diffusion and Defect Data Part B,, 59–60 (), 51–62.
Ernst, F., Pirouz, P., & Bauser, E. (1992). Lattice Mismatch Accommodation at GeSi/(111)Si Interfaces\ Grown by Liquid Phase Epitaxy. Physica Status Solidi (a), 131 (), 651–662.
Ernst, F., Pirouz, P., & Heuer, A. H. (1991). HRTEM Study of a Cu/Al2O3 Interface. Philosophical Magazine A, 63 (), 259–277.
Pirouz, P., Yang, J., Powell, J., & Ernst, F. (1991). The Role of Dislocations in the 3C6H SiC Polytypic Transformation. Inst. Phys. Conf. Ser. No., 117(3) (), 149–154.
Ernst, F., Pirouz, P., & Heuer, A. H. (1989). High Resolution Electron Microscopy of an Alumina/Copper Interface. , 138 (), 557–562.
Ernst, F., & Pirouz, P. (1989). The Formation Mechanism of Planar Defects in Compound Semiconductors Grown Epitaxially on {100} Silicon Substrates. Journal of Materials Research, 4 (), 834–842.
Cheng, T., Pirouz, P., & Ernst, F. (1988). Inversion Domain Boundary Dislocations in Heteroepitaxial Films. , 144 (), 189–194.
Ernst, F., & Pirouz, P. (1988). Formation of Planar Defects in the Epitaxial Growth of GaP on Si Substrate by MOCVD. Journal of Applied Physics, 64 (), 4526–4530.
Pirouz, P., Ernst, F., & Cheng, T. (1988). Heteroepitaxy on (001) Silicon: Growth Mechanisms and Defect Formation. , 116 (), 57–70.
Pirouz, P., Yang, J., Ernst, F., & Möller, H. (1988). Hexagonal Silicon: A New HREM Study. , 139 (), 199–204.