Explore photolithography and lithography tools at the Materials for Opto/Electronics Research and Education (MORE) Center at Case Western Reserve University.
Photolithography
Suss MJB3 Contact Mask Aligner
Photolithography uses UV sensitive photoresists and a chromium mask to transfer a pattern onto a substrate. The mask aligner is used to precisely position the mask with respect to other features. Our deposition facilities can then be used to create structures with various materials. This tool is capable of patterning sub-micron scale or larger features on 1 mm to 3” diameter wafers. Positive and negative tone resists are available.
Electron Beam Lithography
Tescan Vega-3 SBH
Electron beam (e-beam) lithography uses a scanning electron microscope (SEM) to expose a substrate to an extremely small and precisely position controlled high energy electron beam. When the substrate is coated with an e-beam sensitive resist, this technique can be used to write arbitrarily shaped sub-100 nm features. Our deposition facilities can then be used to create structures with various materials. PMMA and MMA e-beam resists are available.
Lithography Support
- Cleanroom facilities: The MORE Center maintains a class 10000 cleanroom for handling samples. This includes a fume hood for coating and removing photoresists.
- Spin coating: Laurell WS-400 This spin coater is located in the cleanroom for coating resists, and is equipped with a fragment adapter.